| 型号 |
供应商
|
品牌 | 批号 | 数量 | 封装 | 交易说明 | 询价 |
|---|---|---|---|---|---|---|---|
|
ZXMHC6A07N8TC
|
Chipnobo/无边界
|
23+ |
800000
|
SO-8 |
晶体管 > MOS(场效应管)
|
|
|
|
ZXMHC6A07N8TC
|
DIODES/美台
|
23+ |
168000
|
|
|||
|
ZXMHC6A07N8TC
|
DIODES/美台
|
23+ |
100000
|
|
|||
|
ZXMHC6A07N8TC
|
DIODES/美台
|
23+ |
89000
|
SOP-8 |
MOSFET 2N/2P-CH 60V 8-SOIC
|
|
|
|
ZXMHC6A07N8TC
|
DIODES/美台
|
24+ |
65663
|
SOP-8 |
|
||
|
ZXMHC6A07N8TC
|
DIODES/美台
|
22+ |
60000
|
SOP |
|
||
|
ZXMHC6A07N8TC
|
DIODES/美台
|
2020+ |
59580
|
SO-8 |
ZXMHC6A07N8TC
|
|
|
|
ZXMHC6A07N8TC
|
DIODES/美台
|
23+ |
35200
|
SOP-8 |
|
||
|
ZXMHC6A07N8TC
|
DIODES/美台
|
21+ |
33000
|
|
|||
|
ZXMHC6A07N8TC
|
DIODES/美台
|
23+ |
30300
|
SOP-8 |
|
||
|
ZXMHC6A07N8TC
|
DIODES/美台
|
22+ |
30000
|
8-SOIC |
|
||
|
ZXMHC6A07N8TC
|
DIODES/美台
|
22+ |
20000
|
SMD |
|
||
|
ZXMHC6A07N8TC
|
DIODES/美台
|
22+ |
20000
|
|
|||
|
ZXMHC6A07N8TC
|
DIODES/美台
|
2022+ |
10000
|
SMD |
|
||
|
ZXMHC6A07N8TC
|
DIODES/美台
|
21+ |
10000
|
N/A |
|
||
|
ZXMHC6A07N8TC
|
DIODES/美台
|
21+ |
10000
|
N/A |
|
||
|
ZXMHC6A07N8TC
|
DIODES/美台
|
18+ |
10000
|
8-SOIC0.1 |
|
||
|
ZXMHC6A07N8TC
|
DIODES/美台
|
23+ |
9000
|
SO-8 |
标准规格
|
|
|
|
ZXMHC6A07N8TC
|
DIODES/美台
|
23+24+ |
8761
|
SOP8 |
|
||
|
ZXMHC6A07N8TC
|
达尔DIODES
|
22+ |
6000
|
NA |
|
||
|
ZXMHC6A07N8TC
|
DIODES/美台
|
2018+ |
5000
|
|
|||
|
ZXMHC6A07N8TC
|
DIODES/美台
|
1547+ |
5000
|
SOP |
|
||
|
ZXMHC6A07N8TC
|
美台/DIODES
|
2132+ |
5000
|
SO8 |
MOSFET BVDSS: 41V~60V,SO-8,T&R,2.5K
|
|
|
|
ZXMHC6A07N8TC
|
DIODES/美台
|
23+ |
3852
|
SO-8 |
NA
|
|
|
|
ZXMHC6A07N8TC
|
DIODES/美台
|
1042+ |
2500
|
SOP-8 |
|
||
|
ZXMHC6A07N8TC
|
DIODES/美台
|
2023 |
2500
|
SO-8 |
|
||
|
DIODES/美台
|
23+ |
2500
|
SOP-8 |
|
制造商: Diodes Inc.产品种类: MOSFET 及电源驱动器 IC产品: H-Bridge Drivers上升时间: 1.4 ns下降时间: 2 ns最大功率耗散: 0.87 W最大工作温度: - 55 C最小工作温度: + 150 C封装 / 箱体: SOIC-8封装: Reel最大关闭延迟时间: 4.9 ns最大开启延迟时间: 1.8 ns安装风格: SMD/SMT激励器数量: 4输出电压: 60 V
| 型号 | 厂商 | 大小 | ||
|---|---|---|---|---|
| ZXMHC6A07N8TC | Diodes Incorporated | 0.71M | 下载 |
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