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半导体行业观察第一站
| 型号 |
供应商
|
品牌 | 批号 | 数量 | 封装 | 交易说明 | 询价 |
|---|---|---|---|---|---|---|---|
|
FQD1N60CTM
|
FAIRCHILD/仙童
|
11 |
1800
|
|
|||
|
FQD1N60CTM
|
ONSEMI/安森美
|
13+ |
1690
|
TO-252-3 |
|
||
|
FQD1N60CTM
|
FAIRCHILD/仙童
|
20+ |
1490
|
|
|||
|
FQD1N60CTM
|
FAIRCHILD/仙童
|
1490
|
说实话杜绝假货
|
|
|||
|
FQD1N60CTM
|
ONSEMI/安森美
|
1152
|
|
||||
|
FQD1N60CTM
|
FAIRCHILD/仙童
|
24+ |
1150
|
TO252 |
|
||
|
FQD1N60CTM
|
ONSEMI/安森美
|
26+ |
1000
|
SMD |
场效应管
|
|
|
|
FQD1N60CTM
|
FAIR CHILD
|
2011 |
805
|
NA |
|
||
|
FQD1N60CTM
|
FAIR CHILD
|
2011 |
805
|
|
|||
|
FQD1N60CTM
|
FAIRCHILD/仙童
|
11+ |
500
|
TO-252 |
|
||
|
FQD1N60CTM
|
FAIRCHILD/仙童
|
11+ |
500
|
TO-252 |
|
||
|
FQD1N60CTM
|
FAIRCHILD/仙童
|
13+ |
150
|
TO252 |
|
||
|
FQD1N60CTM
|
FAIRCHILD/仙童
|
16+ |
117
|
TO-252 |
|
||
|
FQD1N60CTM
|
FAIRCHILD/仙童
|
16+ |
117
|
TO-252 |
|
||
|
FQD1N60CTM
|
FAIRCHILD/仙童
|
07PB/09 |
55
|
TO252 |
|
||
|
FQD1N60CTM
|
FAIRCHILD/仙童
|
2006+ |
40
|
TO-252 |
|
||
|
FQD1N60CTM
|
ONSEMI/安森美
|
20+ |
40
|
TO-252 |
|
||
|
FQD1N60CTM
|
ONSEMI/安森美
|
20+ |
30
|
TO-252 |
|
||
|
FQD1N60CTM
|
FAIRCHILD/仙童
|
0512+ |
30
|
TO-252 |
|
||
|
FQD1N60CTM
|
ONSEMI/安森美
|
20+ |
18
|
TO-252 |
|
||
|
FQD1N60CTM
|
ONSEMI/安森美
|
21+ |
10
|
TO-252 |
|
||
|
FQD1N60CTM
|
XGT
|
17+ |
1
|
NA |
|
||
|
FQD1N60CTM
|
-
|
22+ |
1
|
NA |
|
||
|
FQD1N60CTM
|
-
|
22+ |
1
|
NA |
|
||
|
FQD1N60CTM
|
FAIRCHILD/仙童
|
08+PB |
1
|
TO-252 |
|
类别:分离式半导体产品 家庭:MOSFET,GaNFET - 单 系列:QFET™FET 型:MOSFET N 通道,金属氧化物FET 特点:标准型开态Rds(最大)@ Id, Vgs @ 25° C:11.5 欧姆 @ 500mA, 10V漏极至源极电压(Vdss):600V电流 - 连续漏极(Id) @ 25° C:1AId 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:6.2nC @ 10V在 Vds 时的输入电容(Ciss) :170pF @ 25V功率 - 最大:2.5W安装类型:表面贴装 封装/外壳:DPak, SC-63,TO-252(2 引线+接片)包装:带卷 (TR)供应商设备封装:*
FQD1N60CTM的搜索指数、商家竞价均价、商家总数以及库存量等烽火指数情况 点击查看