| 型号 |
供应商
|
品牌 | 批号 | 数量 | 封装 | 交易说明 | 询价 |
|---|---|---|---|---|---|---|---|
|
IPB120N06S4-02
|
INFINEON/英飞凌
|
23+ |
723206
|
TO-263 |
要质量的来
|
|
|
|
IPB120N06S4-02
|
INFINEON/英飞凌
|
22+ |
600000
|
D2PAK |
|
||
|
IPB120N06S4-02
|
INFINEON/英飞凌
|
23+ |
360000
|
TO263-3 |
|
||
|
IPB120N06S4-02
|
NK/南科功率
|
2024+920 |
312000
|
TO-263 |
TO-263 国产供大量
|
|
|
|
IPB120N06S4-02
|
INFINEON/英飞凌
|
22+ |
82256
|
TO263 |
MOSFET
|
|
|
|
IPB120N06S4-02
|
INFINEON/英飞凌
|
2407+ |
79999
|
TO-263 |
定制MOS管
|
|
|
|
IPB120N06S4-02
|
INFINEON/英飞凌
|
23+ |
60600
|
TO-263 |
|
||
|
IPB120N06S4-02
|
INFINEON/英飞凌
|
23+ |
60000
|
TO-263 |
|
||
|
IPB120N06S4-02
|
Infineon/英飞凌
|
22+ |
50000
|
TO-263 |
|
||
|
INFINEON/英飞凌
|
18+ |
50000
|
TO-263 |
|
|||
|
IPB120N06S4-02
|
INFINEON/英飞凌
|
22+ |
43000
|
TO263-3 |
|
||
|
IPB120N06S4-02
|
INFINEON/英飞凌
|
22+ |
38658
|
TO-263 |
800180089
|
|
|
|
IPB120N06S4-02
|
INFINEON/英飞凌
|
22+ |
35628
|
TO-263 |
|
||
|
IPB120N06S4-02
|
INFINEON/英飞凌
|
19+ |
35000
|
TO-263 |
|
||
|
IPB120N06S4-02
|
INFINEON/英飞凌
|
22+ |
34969
|
TO-263 |
|
||
|
IPB120N06S4-02
|
INFINEON/英飞凌
|
22+ |
32365
|
TO263-3 |
|
||
|
IPB120N06S4-02
|
I
|
22+ |
32363
|
TO-263 |
|
||
|
IPB120N06S4-02
|
台湾中台科技MOSEFT
|
2023+ |
30083
|
TO-263 |
|
||
|
IPB120N06S4-02
|
INFINEON/英飞凌
|
23+ |
27000
|
TO-263 |
|
||
|
IPB120N06S4-02
|
Infineon/英飞凌
|
2024+ |
24000
|
D2PAK |
|
||
|
IPB120N06S4-02
|
INFINEON/英飞凌
|
22+ |
22358
|
TO-263 |
|
||
|
IPB120N06S4-02
|
INFINEON/英飞凌
|
23+ |
21539
|
TO-263 |
YOU
|
|
|
|
IPB120N06S4-02
|
INFINEON/英飞凌
|
24+ |
20000
|
TO-263 |
|
||
|
IPB120N06S4-02
|
INFINEON/英飞凌
|
22+ |
20000
|
MOSFET)40V60V) |
MOSFET_)40V 60V)
|
|
|
|
IPB120N06S4-02
|
INFINEON/英飞凌
|
23+ |
20000
|
PG-TO263-3 |
|
||
|
IPB120N06S4-02
|
INFINEON/英飞凌
|
20+ |
18000
|
SOT263 |
|
||
|
IPB120N06S4-02
|
NA
|
22+ |
16789
|
|
|||
|
IPB120N06S4-02
|
INFINEON/英飞凌
|
22+ |
12500
|
TO-263 |
|
||
|
IPB120N06S4-02
|
INFINEON/英飞凌
|
19+20 |
11585
|
MOS |
|
||
|
IPB120N06S4-02
|
INFINEON/英飞凌
|
22+ |
10000
|
TO-263 |
|
类别：分离式半导体产品 家庭：MOSFET，GaNFET - 单 系列：OptiMOS™FET 型：MOSFET N 通道，金属氧化物FET 特点：标准型开态Rds（最大）@ Id, Vgs @ 25° C：2.4 毫欧 @ 100A, 10V漏极至源极电压(Vdss)：60V电流 - 连续漏极(Id) @ 25° C：120AId 时的 Vgs(th)（最大）：4V @ 140µA 闸电荷(Qg) @ Vgs：195nC @ 10V在 Vds 时的输入电容(Ciss) ：15750pF @ 25V功率 - 最大：188W安装类型：表面贴装 封装/外壳：TO-263-2, D²Pak (2 引线 + 接片), TO-263AB包装：带卷 (TR)供应商设备封装：TO-263-3
IPB120N06S4-02的搜索指数、商家竞价均价、商家总数以及库存量等烽火指数情况 点击查看
